? semiconductor components industries, llc, 2011 november, 2011 ? rev. 1 1 publication order number: NTTFS5820NL/d NTTFS5820NL power mosfet 60 v, 37 a, 11.5 m features ? low r ds(on) ? low capacitance ? optimized gate charge ? these devices are pb ? free and are rohs compliant maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss 60 v gate ? to ? source voltage v gs 20 v continuous drain current r ja (note 1) steady state t a = 25 c i d 11 a t a = 100 c 7 power dissipation r ja (note 1) t a = 25 c p d 2.7 w t a = 100 c 1.1 continuous drain current r jc (note 1) t c = 25 c i d 37 a t c = 100 c 24 power dissipation r jc (note 1) t c = 25 c p d 33 w t c = 100 c 13 pulsed drain current t p = 10 s i dm 149 a operating junction and storage temperature t j , t stg ? 55 to +150 c source current (body diode) i s 37 a single pulse drain ? to ? source ava- lanche energy l = 0.1 mh e as 48 mj i as 31 a lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal resistance maximum ratings parameter symbol value unit junction ? to ? case ? steady state (note 1) r jc 3.8 c/w junction ? to ? ambient ? steady state (note 1) r ja 46.7 1. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces. ordering information http://onsemi.com device package shipping ? v (br)dss r ds(on) max i d max 60 v 11.5 m @ 10 v 37 a n ? channel mosfet d (5 ? 8) s (1,2,3) g (4) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. wdfn8 ( 8fl) case 511ab marking diagram 15 m @ 4.5 v NTTFS5820NLtag wdfn8 (pb ? free) 1500 / tape & reel (note: microdot may be in either location) 1 5820 = specific device code a = assembly location y = year ww = work week = pb ? free package 1 NTTFS5820NLtwg wdfn8 (pb ? free) 5000 / tape & reel 5820 ayww d d d d s s s g
NTTFS5820NL http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 57 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 60 v t j = 25 c 1.0 a t j = 125 c 10 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.5 2.3 v negative threshold temperature coefficient v gs(th) /t j 6.2 mv/ c drain ? to ? source on resistance r ds(on) v gs = 10 v i d = 8.7 a 10.1 11.5 m v gs = 4.5 v i d = 7.3 a 13.0 15 forward transconductance g fs v ds = 5 v, i d = 10 a 24.6 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 25 v 1462 pf output capacitance c oss 150 reverse transfer capacitance c rss 96 total gate charge q g(tot) v gs = 10 v, v ds = 48 v, i d = 10 a 28 nc v gs = 4.5 v, v ds = 48 v, i d = 10 a 15 threshold gate charge q g(th) v gs = 4.5 v, v ds = 48 v, i d = 10 a 1 nc gate ? to ? source charge q gs 4 gate ? to ? drain charge q gd 8 plateau voltage v gp 3 v gate resistance r g 0.62 switching characteristics (note 3) turn ? on delay time t d(on) v gs = 4.5 v, v ds = 48 v, i d = 10 a, r g = 2.5 10 ns rise time t r 28 turn ? off delay time t d(off) 19 fall time t f 22 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 10 a t j = 25 c 0.79 1.2 v t j = 125 c 0.65 reverse recovery time t rr v gs = 0 v, d is /d t = 100 a/ s, i s = 10 a 19 ns charge time t a 13 discharge time t b 6 reverse recovery charge q rr 15 nc 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NTTFS5820NL http://onsemi.com 3 typical characteristics 012345 figure 1. on ? region characteristics v ds , drain ? to ? source voltage (v) i d , drain current (a) 10 v 3.4 v v gs = 5 v 2.8 v 4.0 v 3.8 v 3.6 v t j = 25 c 3.0 v 3.2 v 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 12345 v ds 10 v t j = 25 c t j = ? 55 c t j = 125 c figure 2. transfer characteristics v gs , gate ? to ? source voltage (v) i d , drain current (a) 0.005 0.010 0.015 0.020 0.025 0.030 24681012 figure 3. on ? resistance vs. gate ? to ? source voltage v gs , gate ? to ? source voltage (v) r ds(on) , drain ? to ? source resistance ( ) i d = 10 a t j = 25 c 0.008 0.010 0.012 0.014 0.016 5 10152025303540 figure 4. on ? resistance vs. drain current and gate voltage i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) v gs = 4.5 v t j = 25 c v gs = 10 v 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 ? 50 ? 25 0 25 50 75 100 125 150 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) r ds(on) , drain ? to ? source resistance (normalized) v gs = 10 v i d = 10 a 100 1,000 10,000 100,000 10 20 30 40 50 60 figure 6. drain ? to ? source leakage current vs. voltage v ds , drain ? to ? source voltage (v) i dss , leakage (na) t j = 125 c t j = 150 c v gs = 0 v
NTTFS5820NL http://onsemi.com 4 typical characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 102030405060 figure 7. capacitance variation drain ? to ? source voltage (v) c, capacitance (pf) t j = 25 c v gs = 0 v c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 30 figure 8. gate ? to ? source voltage vs. total charge q g , total gate charge (nc) v gs , gate ? to ? source voltage (v) v ds = 48 v i d = 10 a t j = 25 c q t q gs q gd 1 10 100 1000 1 10 100 figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( ) t, time (ns) v dd = 48 v i d = 10 a v gs = 4.5 v t d(off) t d(on) t f t r 0 10 20 30 40 0.5 0.6 0.7 0.8 0.9 1.0 figure 10. diode forward voltage vs. current v sd , source ? to ? drain voltage (v) i s , source current (a) t j = 25 c v gs = 0 v 0.1 1 10 100 1000 0.1 1 10 100 figure 11. maximum rated forward biased safe operating area v ds , draisn voltage (v) i d , drain current (a) v gs = 10 v single pulse t c = 25 c r ds(on) limit thermal limit package limit 100 s 10 s 1 ms dc 10 ms 0 10 20 30 40 50 25 50 75 100 125 150 figure 12. maximum avalanche energy vs. starting junction temperature t j , starting junction temperature ( c) e as , single pulse drain ? to ? source avalanche energy (mj)
NTTFS5820NL http://onsemi.com 5 typical characteristics 0.01 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 13. thermal response pulse time (sec) r ja(t) ( c/w) effective transient thermal resistance 0.1 duty cycle = 0.5 0.2 0.05 0.02 0.01 single pulse
NTTFS5820NL http://onsemi.com 6 package dimensions wdfn8 3.3x3.3, 0.65p case 511ab issue c m 0 1.60 12 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1 5 6 top view side view bottom view d1 e1 d e b a 0.20 0.20 2x 2x dim min nom millimeters a 0.70 0.75 a1 0.00 d1 e1 1.47 1.60 e 0.64 0.06 0.13 a 0.10 0.10 detail a 14 8 l1 e/2 8x d2 g e2 k 0.10?b c l detail a a1 e 6x c 4x c seating plane 5 max 0.80 0.05 0.40 0.25 3.15 2.24 3.15 1.73 0.51 0.20 m *for additi onal information on our pb free strategy and soldering details, please download the on semiconductor soldering and mounting t echniques reference manual, solderrm/d. soldering footprint* 0.65 0.42 0.75 2.30 3.46 package 8x 0.055 0.059 0 0.063 12 0.028 0.030 0.000 0.006 0.008 0.025 0.002 0.005 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.020 0.008 min nom inches max 7 8 pitch 3.60 0.57 0.47 outline dimension: millimeters 3.30 bsc 3.30 bsc 0.130 bsc 0.130 bsc 2.37 0.66 4x e3 0.23 0.30 0.40 0.009 0.012 0.016 e3 4x 234 b c d d2 e e2 g k l l1 0.30 1.40 1.50 0.43 0.56 0.012 0.017 0.022 0.016 0.012 0.41 0.30 0.65 bsc 0.026 bsc 0.058 0.063 0.116 0.120 3.05 2.95 1.98 2.95 3.05 2.11 0.078 0.116 0.120 0.083 0.012 0.009 c c 0.23 0.15 0.30 0.20 ca 0.05 c c on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 NTTFS5820NL/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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